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MG6331
Bipolar (BJT) Single Transistor, Audio, NPN, 230 V, 18 A, 300 W, TO-3P, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoMG6331
Newark Part No.23T0967
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoMG6331
Newark Part No.23T0967
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo230V
Collector Emitter Voltage Max230V
Continuous Collector Current18A
Power Dissipation300W
Power Dissipation Pd300W
DC Collector Current18A
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency60MHz
DC Current Gain hFE Min70hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (16-Jul-2019)
Product Overview
The MG6331 is a 230V Silicon Epitaxial Planar NPN Transistor designed for audio power applications with high current audio bipolar with wide safe operating area.
- Complement to the MG9410
Applications
Audio
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
230V
Power Dissipation
300W
DC Collector Current
18A
Transistor Mounting
Through Hole
Transition Frequency
60MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (16-Jul-2019)
Collector Emitter Voltage V(br)ceo
230V
Continuous Collector Current
18A
Power Dissipation Pd
300W
Transistor Case Style
TO-3P
No. of Pins
3Pins
DC Current Gain hFE Min
70hFE
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jul-2019)
Download Product Compliance Certificate
Product Compliance Certificate