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BUZ900
Power MOSFET, N Channel, 160 V, 8 A, 1.5 ohm, TO-3, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ900
Newark Part No.19M0049
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ900
Newark Part No.19M0049
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds160V
Continuous Drain Current Id8A
On Resistance Rds(on)1.5ohm
Drain Source On State Resistance1.5ohm
Transistor MountingThrough Hole
Power Dissipation Pd125W
Rds(on) Test Voltage14V
Transistor Case StyleTO-3
Gate Source Threshold Voltage Max1.5V
Power Dissipation125W
No. of Pins2Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
Product Overview
The BUZ900 is a 160V N-channel Power MOSFET for audio applications. It features integral protection diode and enhancement mode.
- High speed switching
- Semefab designed and diffused
- High voltage
- High energy rating
- ±14V Gate to source voltage
- 8A Body drain diode current
- 1°C/W Thermal resistance, junction to case
Applications
Audio
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
160V
On Resistance Rds(on)
1.5ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
14V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
2Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
8A
Drain Source On State Resistance
1.5ohm
Power Dissipation Pd
125W
Transistor Case Style
TO-3
Power Dissipation
125W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (16-Jul-2019)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jul-2019)
Download Product Compliance Certificate
Product Compliance Certificate