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BUZ900D
Power MOSFET, N Channel, 160 V, 16 A, 0.75 ohm, TO-3, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ900D
Newark Part No.96K7201
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ900D
Newark Part No.96K7201
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds160V
Continuous Drain Current Id16A
Drain Source On State Resistance0.75ohm
On Resistance Rds(on)0.75ohm
Rds(on) Test Voltage-
Transistor MountingThrough Hole
Power Dissipation Pd250W
Transistor Case StyleTO-3
Gate Source Threshold Voltage Max1.5V
Power Dissipation250W
No. of Pins2Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
The BUZ900D is a 160V N-channel Power MOSFET for audio applications. It features integral protection diode and enhancement mode.
- High speed switching
- Semefab designed and diffused
- High voltage
- High energy rating
- ±14V Gate to source voltage
- 16A Body drain diode current
- 0.5°C/W Thermal resistance, junction to case
Applications
Audio
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
160V
Drain Source On State Resistance
0.75ohm
Rds(on) Test Voltage
-
Power Dissipation Pd
250W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
2Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.75ohm
Transistor Mounting
Through Hole
Transistor Case Style
TO-3
Power Dissipation
250W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate