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BUZ900P
Power MOSFET, N Channel, 160 V, 8 A, 1.5 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ900P
Newark Part No.96K7202
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ900P
Newark Part No.96K7202
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds160V
Continuous Drain Current Id8A
Drain Source On State Resistance1.5ohm
On Resistance Rds(on)1.5ohm
Rds(on) Test Voltage-
Transistor MountingThrough Hole
Power Dissipation Pd125W
Transistor Case StyleTO-247
Gate Source Threshold Voltage Max1.5V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (15-Jan-2018)
Product Overview
The BUZ900P is a N-channel enhancement-mode Power MOSFET offers 160V drain source voltage and 8A continuous drain current.
- High speed switching
- Semefab designed and diffused
- High voltage
- High energy rating
- Integral protection diode
- BUZ905P complimentary P-channel
Applications
Power Management, Audio, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
160V
Drain Source On State Resistance
1.5ohm
Rds(on) Test Voltage
-
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
1.5ohm
Transistor Mounting
Through Hole
Transistor Case Style
TO-247
Power Dissipation
125W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate