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BUZ906P
Power MOSFET, P Channel, 200 V, 8 A, 1.5 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ906P
Newark Part No.96K7209
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ906P
Newark Part No.96K7209
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id8A
Drain Source On State Resistance1.5ohm
On Resistance Rds(on)1.5ohm
Rds(on) Test Voltage-
Transistor MountingThrough Hole
Power Dissipation Pd125W
Gate Source Threshold Voltage Max1.5V
Transistor Case StyleTO-247
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
The BUZ906P is a P-channel enhanced mode Power MOSFET with high speed switching and high energy rating.
- Integral protection mode
- Semefab designed and diffused
Applications
Power Management, Industrial
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.5ohm
Rds(on) Test Voltage
-
Power Dissipation Pd
125W
Transistor Case Style
TO-247
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
1.5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
125W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate