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2N6796
Power MOSFET, N Channel, 100 V, 8 A, 0.18 ohm, TO-39, Through Hole
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ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part No2N6796
Newark Part No.98K6265
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part No2N6796
Newark Part No.98K6265
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id8A
On Resistance Rds(on)0.18ohm
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-39
Transistor MountingThrough Hole
Power Dissipation Pd25W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The 2N6796 is a N-channel enhancement TMOS FET offers 100V drain source voltage and 8A continuous drain current.
- 0.18Ω RDS (ON)
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (16-Jul-2019)
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.18ohm
Transistor Case Style
TO-39
Power Dissipation Pd
25W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jul-2019)
Download Product Compliance Certificate
Product Compliance Certificate