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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoDSEI120-12A
Newark Part No.58M5211
Product RangeDSEI1
Technical Datasheet
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoDSEI120-12A
Newark Part No.58M5211
Product RangeDSEI1
Technical Datasheet
Repetitive Peak Reverse Voltage1.2kV
Average Forward Current109A
Diode ConfigurationSingle
Forward Voltage Max1.55V
Reverse Recovery Time60ns
Forward Surge Current600A
Operating Temperature Max150°C
Diode Case StyleTO-247
No. of Pins2 Pin
Product RangeDSEI1
Qualification-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The DSEI120-12A is a Fast Recovery Epitaxial Diode (FRED) features planar passivated chip, very short recovery time, extremely low switching losses and soft recovery behaviour. Suitable for inductive heating and melting, ultrasonic cleaners and welders.
- High reliability circuit operation
- Low voltage peaks for reduced protection circuits
- Low noise switching
- Low losses
- Operating at lower temperature or space saving by reduced cooling
- 357W Total power
- Epoxy meets UL94V-0
Applications
Power Management
Technical Specifications
Repetitive Peak Reverse Voltage
1.2kV
Diode Configuration
Single
Reverse Recovery Time
60ns
Operating Temperature Max
150°C
No. of Pins
2 Pin
Qualification
-
Average Forward Current
109A
Forward Voltage Max
1.55V
Forward Surge Current
600A
Diode Case Style
TO-247
Product Range
DSEI1
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
