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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH16N80P
Newark Part No.58M7593
Technical Datasheet
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH16N80P
Newark Part No.58M7593
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id16A
Drain Source On State Resistance0.6ohm
On Resistance Rds(on)0.6ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd460W
Gate Source Threshold Voltage Max5V
Power Dissipation460W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFH16N80P is a PolarHV™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast recovery diode.
- Unclamped inductive switching (UIS) rated
- International standard package
- Low package inductance
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.6ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.6ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
460W
Power Dissipation
460W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
