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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTQ88N30P
Newark Part No.58M7684
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 45 week(s)
Quantity | Price |
---|---|
1+ | $12.250 |
10+ | $11.890 |
25+ | $9.960 |
60+ | $8.080 |
120+ | $7.780 |
270+ | $7.470 |
Price for:Each
Minimum: 1
Multiple: 1
$12.25
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTQ88N30P
Newark Part No.58M7684
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id88A
On Resistance Rds(on)0.04ohm
Drain Source On State Resistance0.04ohm
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
Power Dissipation Pd600W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation600W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXTQ88N30P is a PolarHT™ single N-channel enhancement-mode standard Power MOSFET offers low reduced static drain-to-source ON-resistance and high power density.
- International standard packages
- Avalanche rating
- Unclamped inductive switching (UIS) rating
- Low package inductance - Easy to drive and to protect
- Easy to mount
- Space saving
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
88A
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
600W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
300V
On Resistance Rds(on)
0.04ohm
Transistor Case Style
TO-3P
Power Dissipation Pd
600W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
