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SI7119DN-T1-E3
Power MOSFET, P Channel, 200 V, 3.8 A, 0.86 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.597 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$1,791.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7119DN-T1-E3
Newark Part No.09X6443
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id3.8A
Drain Source On State Resistance0.86ohm
On Resistance Rds(on)0.86ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd52W
Transistor Case StylePowerPAK 1212
Gate Source Threshold Voltage Max4V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.86ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
52W
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
3.8A
On Resistance Rds(on)
0.86ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK 1212
Power Dissipation
52W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate