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D2219UK
RF FET Transistor, 40 V, 2 A, 17.5 W, 1 MHz, 1 GHz, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoD2219UK
Newark Part No.23T0828
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoD2219UK
Newark Part No.23T0828
Technical Datasheet
Drain Source Voltage Vds40V
Continuous Drain Current Id2A
Power Dissipation17.5W
Power Dissipation Pd17.5W
Operating Frequency Min1MHz
Operating Frequency Max1GHz
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max200°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (16-Jul-2019)
Product Overview
The D2219UK is a metal gate RF Silicon FET with single ended configuration for HF/VHF/UHF communications from 1MHz to 1GHz applications. It is a gold metalized multi-purpose DMOS RF transistor features simplified amplifier design and suitable for broadband applications.
- Simple bias circuits
- Low noise
- High gain
- Low reverse transfer capacitance
Applications
Industrial, Communications & Networking, Power Management
Technical Specifications
Drain Source Voltage Vds
40V
Power Dissipation
17.5W
Operating Frequency Min
1MHz
Transistor Case Style
SOIC
Operating Temperature Max
200°C
Transistor Mounting
Surface Mount
MSL
-
Continuous Drain Current Id
2A
Power Dissipation Pd
17.5W
Operating Frequency Max
1GHz
No. of Pins
8Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (16-Jul-2019)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jul-2019)
Download Product Compliance Certificate
Product Compliance Certificate