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2N5321
Bipolar (BJT) Single Transistor, NPN, 50 V, 2 A, 10 W, TO-39, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerSOLID STATE
Manufacturer Part No2N5321
Newark Part No.67R1101
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max50V
Collector Emitter Voltage V(br)ceo50V
Continuous Collector Current2A
Power Dissipation10W
Power Dissipation Pd10W
DC Collector Current2A
Transistor Case StyleTO-39
Transistor MountingThrough Hole
DC Current Gain hFE250hFE
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min250hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N5321 is a 50V Silicon NPN Power Transistor designed for medium power amplifier and switching applications.
- Collector-base voltage(Vcbo = 75)
- Emitter-base voltage(Vebo = 5V)
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation
10W
DC Collector Current
2A
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
250hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
50V
Continuous Collector Current
2A
Power Dissipation Pd
10W
Transistor Case Style
TO-39
DC Current Gain hFE
250hFE
Transition Frequency
-
Operating Temperature Max
200°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability