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BSS138PW,115
Power MOSFET, N Channel, 60 V, 320 mA, 0.9 ohm, SOT-323, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.240 |
| 10+ | $0.131 |
| 25+ | $0.108 |
| 50+ | $0.084 |
| 100+ | $0.061 |
| 250+ | $0.060 |
| 500+ | $0.059 |
| 1000+ | $0.051 |
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Multiple: 1
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS138PW,115
Newark Part No.58T1369
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id320mA
Drain Source On State Resistance0.9ohm
On Resistance Rds(on)0.9ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd830mW
Gate Source Threshold Voltage Max1.2V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Alternatives for BSS138PW,115
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Product Overview
The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Logic Level Compatible
- Very Fast Switching
- ESD Protection Upto 1.5kV
- AEC-Q101 Qualified
Applications
Audio, Power Management, Automotive, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
320mA
On Resistance Rds(on)
0.9ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
830mW
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.9ohm
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability