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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Dual MOSFETs
                      Print Page

                      SI1922EDH-T1-GE3

                      Dual MOSFET, N Channel, 20 V, 20 V, 1.3 A, 1.3 A, 0.165 ohm

                      Date/Lot Code

                      VISHAY SI1922EDH-T1-GE3
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerVISHAY
                      Manufacturer Part NoSI1922EDH-T1-GE3
                      Newark Part No.64T4056
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      17,075 In Stock

                      Need more?

                      Delivery in 2-4 Business Days(UK stock)
                      Order before 9pm EST standard shipping
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                      Price shown includes applicable duties and tariffs
                      QuantityPrice
                      1+$0.577
                      25+$0.476
                      100+$0.314
                      500+$0.263
                      1000+$0.212
                      2500+$0.203
                      10000+$0.196
                      25000+$0.192
                      Price for:Each (Supplied on Cut Tape)
                      Minimum: 5
                      Multiple: 5
                      $2.88
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerVISHAY
                      Manufacturer Part NoSI1922EDH-T1-GE3
                      Newark Part No.64T4056
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Drain Source Voltage Vds N Channel20V
                      Continuous Drain Current Id1.3A
                      Drain Source Voltage Vds20V
                      Drain Source Voltage Vds P Channel20V
                      Continuous Drain Current Id N Channel1.3A
                      Continuous Drain Current Id P Channel1.3A
                      Drain Source On State Resistance N Channel0.165ohm
                      Drain Source On State Resistance P Channel0.165ohm
                      Transistor Case StyleSOT-363
                      No. of Pins6Pins
                      Power Dissipation N Channel1.25W
                      Power Dissipation P Channel1.25W
                      Operating Temperature Max150°C
                      Product Range-
                      Qualification-
                      MSLMSL 1 - Unlimited
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      The SI1922EDH-T1-GE3 is a dual N-channel MOSFET intended for small to medium load applications where a miniaturized package is required. It is compatible with load switch for portable applications.

                      • Halogen-free
                      • ESD protected device

                      Applications

                      Industrial, Portable Devices, Power Management

                      Technical Specifications

                      Channel Type

                      N Channel

                      Continuous Drain Current Id

                      1.3A

                      Drain Source Voltage Vds P Channel

                      20V

                      Continuous Drain Current Id P Channel

                      1.3A

                      Drain Source On State Resistance P Channel

                      0.165ohm

                      No. of Pins

                      6Pins

                      Power Dissipation P Channel

                      1.25W

                      Product Range

                      -

                      MSL

                      MSL 1 - Unlimited

                      Drain Source Voltage Vds N Channel

                      20V

                      Drain Source Voltage Vds

                      20V

                      Continuous Drain Current Id N Channel

                      1.3A

                      Drain Source On State Resistance N Channel

                      0.165ohm

                      Transistor Case Style

                      SOT-363

                      Power Dissipation N Channel

                      1.25W

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      SVHC

                      No SVHC (21-Jan-2025)

                      Technical Docs (4)

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Technical Data Sheet EN

                      CAD CadSoft_EAGLE EN

                      Associated Products

                      1 Product Found

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Product traceability

                      Date/Lot Code

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