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ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBDT65CX
Newark Part No.89T8634
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBDT65CX
Newark Part No.89T8634
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max120V
Collector Emitter Voltage V(br)ceo120V
Continuous Collector Current12A
Transition Frequency-
Power Dissipation125W
No. of Pins3Pins
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Operating Temperature Max150°C
DC Current Gain hFE Min1000hFE
Product Range-
Qualification-
SVHCNo SVHC (16-Jul-2019)
Product Overview
The BDT65CX is a NPN silicon epitaxial Power Transistor in monolithic Darlington circuit for audio output stages, general purpose amplifier and switching applications.
- PNP complement BDT64C
Applications
Industrial, Power Management, Audio
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
120V
Transition Frequency
-
No. of Pins
3Pins
Transistor Mounting
Through Hole
DC Current Gain hFE Min
1000hFE
Qualification
-
Collector Emitter Voltage Max
120V
Continuous Collector Current
12A
Power Dissipation
125W
Transistor Case Style
TO-220
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (16-Jul-2019)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jul-2019)
Download Product Compliance Certificate
Product Compliance Certificate