Print Page
MJD31C1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 3 A, 15 W, TO-251, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD31C1G
Newark Part No.42K1277
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Continuous Collector Current3A
Power Dissipation15W
Power Dissipation Pd15W
DC Collector Current3A
DC Current Gain hFE10hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-251
Transition Frequency3MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
QualificationAEC-Q101
Product Range-
Automotive Qualification StandardAEC-Q101
MSL-
SVHCLead
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
100V
Power Dissipation
15W
DC Collector Current
3A
Transistor Mounting
Through Hole
Transistor Case Style
TO-251
DC Current Gain hFE Min
10hFE
Qualification
AEC-Q101
Automotive Qualification Standard
AEC-Q101
SVHC
Lead
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
3A
Power Dissipation Pd
15W
DC Current Gain hFE
10hFE
No. of Pins
3Pins
Transition Frequency
3MHz
Operating Temperature Max
150°C
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65