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2SC5707-E
Bipolar (BJT) Single Transistor, NPN, 50 V, 8 A, 15 W, TO-251, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part No2SC5707-E
Newark Part No.65T2498
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max50V
Collector Emitter Voltage V(br)ceo50V
Continuous Collector Current8A
DC Collector Current8A
Power Dissipation15W
Power Dissipation Pd15W
Transistor Case StyleTO-251
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency330MHz
DC Current Gain hFE Min200hFE
DC Current Gain hFE200hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (15-Jan-2018)
Product Overview
- 50V, 8A, bipolar transistor
- Adoption of FBET and MBIT processes
- Large current capacitance
- Low collector-to-emitter saturation voltage
- High-speed switching
- High allowable power dissipation
- (PNP)NPN single for high-current switching application
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
DC Collector Current
8A
Power Dissipation Pd
15W
Transistor Mounting
Through Hole
Transition Frequency
330MHz
DC Current Gain hFE
200hFE
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Collector Emitter Voltage Max
50V
Continuous Collector Current
8A
Power Dissipation
15W
Transistor Case Style
TO-251
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65