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ManufacturerINFINEON
Manufacturer Part NoBSC042NE7NS3GATMA1
Newark Part No.79X1331
Also Known AsBSC042NE7NS3 G, SP000657440
Technical Datasheet
465 In Stock
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Quantity | Price |
---|---|
1+ | $2.220 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$11.10
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC042NE7NS3GATMA1
Newark Part No.79X1331
Also Known AsBSC042NE7NS3 G, SP000657440
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id100A
On Resistance Rds(on)0.0037ohm
Drain Source On State Resistance0.0037ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd125W
Gate Source Threshold Voltage Max3.1V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSC042NE7NS3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.
- Best switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Ideal for high frequency switching and DC-to-DC converters
- Normal level
- Superior thermal resistance
- 100% avalanche tested
- Qualified according to JEDEC for target applications
- Green device
Applications
Power Management, Motor Drive & Control, Audio, Communications & Networking
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
0.0037ohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0037ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
125W
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Alternatives for BSC042NE7NS3GATMA1
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
