Print Page
BSC050NE2LSATMA1
Power MOSFET, N Channel, 25 V, 58 A, 0.0042 ohm, TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
81 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.219 |
| 10+ | $0.219 |
| 25+ | $0.219 |
| 50+ | $0.219 |
| 100+ | $0.219 |
| 250+ | $0.219 |
| 500+ | $0.219 |
| 1000+ | $0.219 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.22
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC050NE2LSATMA1
Newark Part No.47Y7994
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id58A
Drain Source On State Resistance0.0042ohm
On Resistance Rds(on)0.0042ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation28W
Power Dissipation Pd28W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSC050NE2LS is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. Ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator applications. It is available in half-bridge configuration. It minimizes EMI in the system making external snubber networks obsolete and the products easy to design-in.
- Reduces the number of phases in multiphase converters
- Reduce power losses and increase efficiency for all load conditions
- Save space with smallest packages like CanPAK™
- Optimized for high performance buck converter
- Very low ON-resistance RDS (ON) @ VGS = 4.5V
- 100% Avalanche tested
- Superior thermal resistance
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.0042ohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation
28W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
58A
On Resistance Rds(on)
0.0042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
28W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate