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Quantity | Price | Promotional price |
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1+ | $1.400 | $0.364 |
10+ | $0.893 | $0.364 |
25+ | $0.816 | $0.364 |
50+ | $0.739 | $0.364 |
100+ | $0.662 | $0.364 |
250+ | $0.617 | $0.364 |
500+ | $0.571 | $0.364 |
1000+ | $0.521 | $0.364 |
Product Information
Product Overview
The IRFR120NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Technical Specifications
N Channel
100V
0.21ohm
TO-252AA
48W
4V
3Pins
-
MSL 1 - Unlimited
N Channel
9.4A
0.21ohm
Surface Mount
10V
48W
175°C
-
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
7 Products Found
Legislation and Environmental
RoHS
RoHS
Product Compliance Certificate