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STP35N60DM2
MOSFET, N-CH, 600V, 28A, TO-220
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP35N60DM2
Newark Part No.79Y9469
Technical Datasheet
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| Quantity | Price |
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| 1+ | $3.550 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP35N60DM2
Newark Part No.79Y9469
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id28A
Drain Source On State Resistance0.094ohm
On Resistance Rds(on)0.094ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Power Dissipation Pd210W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation210W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.094ohm
Transistor Case Style
TO-220
Power Dissipation Pd
210W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
28A
On Resistance Rds(on)
0.094ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
210W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability