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2SD1047
Bipolar (BJT) Single Transistor, NPN, 140 V, 12 A, 100 W, TO-3P, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part No2SD1047
Newark Part No.98Y2581
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo140V
Collector Emitter Voltage Max140V
Continuous Collector Current12A
Power Dissipation Pd100W
Power Dissipation100W
Transistor Case StyleTO-3P
DC Collector Current12A
DC Current Gain hFE50hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency20MHz
DC Current Gain hFE Min50hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
140V
Power Dissipation Pd
100W
Transistor Case Style
TO-3P
DC Current Gain hFE
50hFE
No. of Pins
3Pins
DC Current Gain hFE Min
50hFE
Product Range
-
MSL
-
Collector Emitter Voltage V(br)ceo
140V
Continuous Collector Current
12A
Power Dissipation
100W
DC Collector Current
12A
Transistor Mounting
Through Hole
Transition Frequency
20MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate