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IPD80R2K8CEATMA1
MOSFET, N-CH, 800V, 1.9A, TO-252
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD80R2K8CEATMA1
Newark Part No.12AC9716
Product RangeCoolMOS CE
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.370 |
| 10+ | $0.992 |
| 25+ | $0.927 |
| 50+ | $0.862 |
| 100+ | $0.797 |
| 250+ | $0.745 |
| 500+ | $0.693 |
| 1000+ | $0.637 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.37
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD80R2K8CEATMA1
Newark Part No.12AC9716
Product RangeCoolMOS CE
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id1.9A
Drain Source On State Resistance2.4ohm
On Resistance Rds(on)2.4ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation42W
Power Dissipation Pd42W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS CE
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
Drain Source On State Resistance
2.4ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
42W
No. of Pins
3Pins
Product Range
CoolMOS CE
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.9A
On Resistance Rds(on)
2.4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
42W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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