Print Page
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF520NSTRLPBF
Newark Part No.13AC9177
Product RangeHEXFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id9.7A
Drain Source On State Resistance0.2ohm
On Resistance Rds(on)0.2ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation48W
Power Dissipation Pd48W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (08-Jul-2021)
Product Overview
Single N-channel IR power MOSFET. It utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
- Advanced process technology
- Fast switching
- Fully avalanche rated
- Planar cell structure for wide SOA
- Product qualification according to JEDEC standard
- High-current rating and high current carrying capability
- Increased ruggedness
- Industry standard qualification level
- Standard pinout allows for drop in replacement
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.2ohm
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
48W
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
9.7A
On Resistance Rds(on)
0.2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
48W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (08-Jul-2021)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate