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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD6039T4G
Newark Part No.30AC9901
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Collector Emitter Voltage V(br)ceo80V
Transition Frequency-
Continuous Collector Current4A
Power Dissipation Pd20W
Power Dissipation20W
DC Collector Current4A
RF Transistor CaseTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE2500hFE
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
DC Current Gain hFE Min1000hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Continuous Collector Current
4A
Power Dissipation
20W
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
2500hFE
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Collector Emitter Voltage Max
80V
Transition Frequency
-
Power Dissipation Pd
20W
DC Collector Current
4A
No. of Pins
3Pins
Transistor Case Style
TO-252 (DPAK)
DC Current Gain hFE Min
1000hFE
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for MJD6039T4G
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability