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Available to Order
Manufacturer Standard Lead Time: 26 week(s)
Non-Cancellable / Non-Returnable
Quantity | Price |
---|---|
1+ | $0.474 |
10+ | $0.277 |
25+ | $0.242 |
50+ | $0.207 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$2.37
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTE4151PT1G
Newark Part No.50AC6484
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id760mA
On Resistance Rds(on)0.26ohm
Drain Source On State Resistance0.36ohm
Transistor Case StyleSC-89
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd313mW
Gate Source Threshold Voltage Max1.2V
Power Dissipation313mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.26ohm
Transistor Case Style
SC-89
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
760mA
Drain Source On State Resistance
0.36ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
313mW
Power Dissipation
313mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate