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Quantity | Price |
---|---|
1+ | $49.260 |
10+ | $41.740 |
25+ | $41.470 |
50+ | $41.190 |
100+ | $39.580 |
250+ | $38.960 |
500+ | $36.720 |
Product Information
Product Overview
HMC510LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This device integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. It is used in application such as point to point/multipoint radio, test equipment & industrial controls, SATCOM, military end-use etc.
- Dual output is Fo = 8.45GHz - 9.55GHz, Fo/2 = 4.225GHz - 4.775GHz
- Phase noise is -116dBc/Hz typ at (100KHz offset, Vtune= +5V at RFOUT)
- No external resonator needed
- Tune voltage range is 2V to 13V
- Supply current is 315mA typ at (TA = +25°C)
- Output return loss is 2dB typ at ( TA = +25°C)
- Frequency drift rate is 0.8MHz/°C typ at (TA = +25°C)
- Pushing at (Vtune= 5V) is 20 MHz/V typ
- Operating temperature is -40°C to +85°C
- Package style is 32-lead QFN
Notes
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technical Specifications
-
5V
-40°C
-
SMD, 5mm x 5mm
-
85°C
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
RoHS
RoHS
Product Compliance Certificate