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BUZ906
Power MOSFET, P Channel, 200 V, 8 A, 1.5 ohm, TO-3, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ906
Newark Part No.24M0853
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ906
Newark Part No.24M0853
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id8A
Drain Source On State Resistance1.5ohm
On Resistance Rds(on)1.5ohm
Rds(on) Test Voltage-
Transistor MountingThrough Hole
Power Dissipation Pd125W
Transistor Case StyleTO-3
Gate Source Threshold Voltage Max1.5V
Power Dissipation125W
No. of Pins2Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (15-Jan-2018)
Product Overview
The BUZ906 is a -200V P-channel Enhancement Mode Power MOSFET with high speed switching and integral protection diode designed for use in audio applications.
- High energy rating
- 60ns Turn-off time
- 120ns Turn-on time
Applications
Audio
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.5ohm
Rds(on) Test Voltage
-
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
2Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
1.5ohm
Transistor Mounting
Through Hole
Transistor Case Style
TO-3
Power Dissipation
125W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate