Print Page
IRF3710PBF
Power MOSFET, N Channel, 100 V, 57 A, 0.023 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF3710PBF
Newark Part No.63J7283
Also Known AsSP001551058
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 1+ | $1.980 |
| 10+ | $1.360 |
| 100+ | $0.947 |
| 500+ | $0.814 |
| 1000+ | $0.748 |
| 3000+ | $0.693 |
| 10000+ | $0.670 |
Price for:Each
Minimum: 1
Multiple: 1
$1.98
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF3710PBF
Newark Part No.63J7283
Also Known AsSP001551058
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id46A
Drain Source On State Resistance0.023ohm
On Resistance Rds(on)0.023ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd200W
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Ultra low on-resistance
- Dynamic dV/dt rating
- Fully avalanche rated
- 175°C Operating temperature
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.023ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
46A
On Resistance Rds(on)
0.023ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
200W
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for IRF3710PBF
1 Product Found
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate