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IRFD9110PBF
MOSFET Transistor, P Channel, 700 mA, 100 V, 1.2 ohm, -10 V, -4 V RoHS Compliant: Yes
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFD9110PBF
Newark Part No.97K1994
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id700mA
Drain Source On State Resistance1.2ohm
On Resistance Rds(on)1.2ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd1.3W
Gate Source Threshold Voltage Max4V
Transistor Case StyleDIP
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
1.3W
Transistor Case Style
DIP
No. of Pins
4Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
700mA
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
Power Dissipation
1.3W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate