Print Page
STP10NK60ZFP
Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP10NK60ZFP
Newark Part No.26M3662
Technical Datasheet
4 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $2.920 | $0.812 |
| 10+ | $2.440 | $0.812 |
| 100+ | $1.830 | $0.812 |
| 500+ | $1.570 | $0.812 |
| 1000+ | $1.330 | $0.812 |
| 2500+ | $1.050 | $0.745 |
Price for:Each
Minimum: 1
Multiple: 1
$0.81
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP10NK60ZFP
Newark Part No.26M3662
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id10A
Drain Source On State Resistance0.65ohm
On Resistance Rds(on)0.65ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd35W
Gate Source Threshold Voltage Max3.75V
Power Dissipation35W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Alternatives for STP10NK60ZFP
3 Products Found
Product Overview
The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET is designed to ensure a high level of dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Extremely high dv/dt capability
- 100% Avalanche tested
- Gate charge minimized
- Zener-protected
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.65ohm
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
On Resistance Rds(on)
0.65ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
35W
Power Dissipation
35W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability