Print Page
BDX53C
Darlington Transistor, Darlington, NPN, 100 V, 60 W, 8 A, TO-220, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
40 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $1.240 |
| 10+ | $0.946 |
| 100+ | $0.553 |
| 500+ | $0.439 |
| 1000+ | $0.393 |
| 2500+ | $0.360 |
| 10000+ | $0.328 |
Price for:Each
Minimum: 1
Multiple: 1
$1.24
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBDX53C
Newark Part No.25M7712
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd60W
Continuous Collector Current8A
Transition Frequency-
Power Dissipation60W
DC Collector Current8A
RF Transistor CaseTO-220
No. of Pins3Pins
DC Current Gain hFE750hFE
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Operating Temperature Max150°C
DC Current Gain hFE Min750hFE
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Alternatives for BDX53C
1 Product Found
Product Overview
The BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor features good DC gain and high fT frequency. BDX53C is typically suited for linear, switching industrial equipment and audio amplification.
- Collector to emitter voltage (Vce) is 100V
- Collector current (Ic) is 8A
- Power dissipation (Pd) is 60W
- Collector to emitter saturation voltage of 2V at 3A collector current
- DC current gain (hFE) of 750 at 3A collector current
- Operating junction temperature range from 150°C
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
8A
Power Dissipation
60W
RF Transistor Case
TO-220
DC Current Gain hFE
750hFE
Transistor Mounting
Through Hole
DC Current Gain hFE Min
750hFE
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Voltage Max
100V
Power Dissipation Pd
60W
Transition Frequency
-
DC Collector Current
8A
No. of Pins
3Pins
Transistor Case Style
TO-220
Operating Temperature Max
150°C
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
WARNINGProposition 65